single mosfet module 120 amperes/500 volts QJS0512001 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 1 01/10 rev. 1 description: powerex single mosfet module is designed specially for customer applications. the module is isolated for easy mounting with other components on a common heatsink. features: typical r ds(on) = 0.022 high dv/dt capabilities two sty60nm50 chips isolated mounting isolation material - dbc ain copper baseplate outline drawing and circuit diagram dimensions inches millimeters a 3.70 94.0 b 1.34 34.0 c 1.18 30.0 d 3.15 80.0 e 0.50 12.7 f 0.28 7.0 g 0.67 17.0 h 0.91 23.0 j 0.91 23.0 dimensions inches millimeters k m6 metric m6 l 0.31 8.0 m 0.256 dia. 6.5 dia. n 0.47 12.0 p 1.13 28.7 q 0.10 2.5 r 0.84 21.3 s 0.21 5.3 t 0.24 6.1 1 3 2 4 5 a d n (3 typ.) f t (deep) c l j e b k (3 typ.) m (2 typ.) p q r s h h g 0.11 x 0.03tab 1 2 3 4 5 6 7
QJS0512001 single mosfet module 120 amperes/500 volts powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com 2 01/10 rev. 1 maximum ratings, t j = 25c unless otherwise specifed ratings symbol QJS0512001 units drain-source voltage v ds 500 volts drain-gate voltage v dgr 500 volts gate-source voltage v gs 30 volts drain current (continuous) at t c = 25c i d 120 amperes drain current (continuous) at t c = 100c i d 75 amperes junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c mounting torque, m6 terminal screws 26 in-lb mounting torque, m6 mounting screws 26 in-lb module weight (typical) 220 grams v isolation voltage v rms 2500 volts static electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units drain-source breakdown voltage v (br)dss i d = 500a, v gs = 0 500 volts zero gate voltage drain current i dss v gs = 0, v ds = 500v 20 a zero gate voltage drain current i dss v gs = 0, v ds = 500v, t c = 125c 200 a gate leakage current i gss v ds = 0, v gs = 20v 20 a gate threshold voltage v gs(th) v ds = v gs , i d = 500a 3.0 4.0 5.0 volts drain-source on resistance r ds(on) i d = 60a, v gs = 10v 0.022 0.025 ? total gate charge q g v dd = 400v, i d = 120a, v gs = 10v 380 530 nc forward on voltage source-drain diode v sd i sd = 120a, v gs = 0 1.5 volts thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case r th(j-c) mosfet 0.1 tbd c/w contact thermal resistance, r th(c-f) module 0.075 c/w thermal grease applied
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